? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 200 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 200 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 156 a i dm t c = 25 ? c, pulse width limited by t jm 630 a i a t c = 25 ? c 100 a e as t c = 25 ? c5j dv/dt i s ? i dm , v dd ? v dss , t j ? 175c 20 v/ns p d t c = 25 ? c 600 w t j -55 ... +175 ? c t jm 175 ? c t stg -55 ... +175 ? c t l 1.6mm (0.062 in.) from case for 10s 300 ? c t sold plastic body for 10s 260 ? c v isol 50/60 hz, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 200 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = ? 20v, v ds = 0v ???????????????????? 200 na i dss v ds = v dss , v gs = 0v 50 ? a t j = 150 ? c 3 ma r ds(on) v gs = 10v, i d = 60a, note 1 8.0 m ? n-channel enhancement mode avalanche rated fast intrinsic diode IXFR230N20T v dss = 200v i d25 = 156a r ds(on) ? ? ? ? ? 8.0m ? ? ? ? ? t rr ? ? ? ? ? 200ns ds100234b(04/14) gigamos tm power mosfet features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 2500v~ electrical isolation ? fast intrinsic diode ? avalanche rated ? low package inductance advantages ? easy to mount ? space savings ? high power density applications ? synchronous recification ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? dc choppers ? ac motor drives ? uninterruptible power supplies ? high speed power switching applications (electrically isolated tab) g = gate d = drain s = source isoplus247 e153432 isolated tab g s d
ixys reserves the right to change limits, test conditions, and dimensions. IXFR230N20T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline note 1: pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 90 150 s c iss 24 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2440 pf c rss 60 pf r gi gate input resistance 1.15 ?? t d(on) 58 ns t r 38 ns t d(off) 62 ns t f 17 ns q g(on) 358 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 138 nc q gd 60 nc r thjc 0.25 ??? c/w r thcs 0.15 ?????????????????? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 230 a i sm repetitive, pulse width limited by t jm 920 a v sd i f = 60a, v gs = 0v, note 1 1.3 v t rr 200 ns q rm 0.74 c i rm 10.6 a i f = 115a, v gs = 0v -di/dt = 100a/ ? s v r = 75v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = i d = 0.5 ? i d25 r g = 1 ? (external)
? 2014 ixys corporation, all rights reserved IXFR230N20T fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 15v 10v 8v 5v 6v 7v fig. 2. extended output characteristis @ t j = 25oc 0 50 100 150 200 250 300 350 0123456789 v ds - volts i d - amperes v gs = 15v 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 00.511.522.533.544.5 v ds - volts i d - amperes v gs = 15v 10v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 115a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 230a i d = 115a fig. 5. r ds(on) normalized to i d = 115a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFR230N20T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 150oc - 40oc 25oc fig. 8. transconductance 0 40 80 120 160 200 240 280 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 320 360 q g - nanocoulombs v gs - volts v ds = 100v i d = 115a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 1,000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2014 ixys corporation, all rights reserved IXFR230N20T fig. 14. resistive turn-on rise time vs. drain current 35 36 37 38 39 40 41 42 43 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 100v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 345678910 r g - ohms t r - nanoseconds 40 60 80 100 120 140 160 180 200 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 230a i d = 115a fig. 16. resistive turn-off switching times vs. junction temperature 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 30 40 50 60 70 80 90 100 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 100v i d = 115a i d = 230a fig. 13. resistive turn-on rise time vs. junction temperature 35 36 37 38 39 40 41 42 43 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 100v i d = 115a i d = 230a fig. 17. resistive turn-off switching times vs. drain current 12 16 20 24 28 32 36 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t f - nanoseconds 40 50 60 70 80 90 100 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 100v t j = 25oc t j = 125oc fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 900 345678910 r g - ohms t f - nanoseconds 60 100 140 180 220 260 300 340 380 420 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 100v i d = 130a i d = 115a
ixys reserves the right to change limits, test conditions, and dimensions. IXFR230N20T ixys ref: f_230n20t(9e-n19) 4-17-14 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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